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| Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2179 6.90.1 0.15 Unit: mm 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.45-0.05 2.50.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings -50 -50 -5 -7 -5 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 0.45-0.05 +0.1 +0.1 2.50.5 2.50.5 2 3 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 1 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 1.20.1 0.65 max. 0.45+0.1 - 0.05 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -500mA*2 VCE = -2V, IC = -2.5A*2 IC = -2A, IB = -100mA*2 IC = -2A, IB = -100mA*2 VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -50 -50 -5 120 60 - 0.2 - 0.85 70 90 *2 min typ max - 0.1 14.50.5 Unit A V V V 340 - 0.3 -1.2 V V MHz 120 pF Pulse measurement *1h FE1 Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.2 -2.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C -2.0 2SB1446 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 VCE(sat) -- IC IC/IB=20 Collector power dissipation PC (W) 1.0 Collector current IC (A) IB=-8mA -7mA 0.8 -1.6 -6mA -1.2 -5mA -4mA -3mA -2mA -1mA - 0.3 Ta=100C 25C - 0.1 - 0.03 - 0.01 0.6 0.4 - 0.8 -25C 0.2 - 0.4 - 0.003 - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC -100 hFE -- IC IC/IB=20 500 VCE=-2V 200 180 450 400 350 300 250 200 -25C 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 Ta=100C fT -- I E VCB=-10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) Transition frequency fT (MHz) -1 -3 -10 -30 -10 -3 25C -1 100C Ta=-25C Forward current transfer ratio hFE 160 140 120 100 80 60 40 20 0 1 3 10 30 100 25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 240 Collector output capacitance Cob (pF) 200 IE=0 f=1MHz Ta=25C 160 120 80 40 0 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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